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Freescale Semiconductor Technical Data
MRFG35010R1 replaced by MRFG35010AR1.
Document Number: MRFG35010 Rev. 9, 1/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. * Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 1 Watt Power Gain -- 10 dB Efficiency -- 30% * 10 Watts P1dB @ 3550 MHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRFG35010R1
3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT
ARCHIVE INFORMATION
CASE 360D - 02, STYLE 1 NI - 360HF
Table 1. Maximum Ratings
Rating Drain - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature
(1)
Symbol VDSS PD VGS Pin Tstg Tch TC
Value 15 28.3 0.19 -5 33 - 65 to +175 175 - 20 to +90
Unit Vdc W W/C Vdc dBm C C C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Class A Class AB Symbol RJC Value 5.3 4.8 Unit C/W
1. For reliable operation, the operating channel temperature should not exceed 150C.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRFG35010R1 1
RF Device Data Freescale Semiconductor
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Table 3. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 -1 9 -- 23 Typ 2.9 <1 0.09 5 - 0.8 - 0.8 10 10 30 Max -- 100 1 15 - 0.7 - 0.5 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W %
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Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 1 W Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 1 W Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS)
ACPR
--
- 42
- 40
dBc
MRFG35010R1 2 RF Device Data Freescale Semiconductor
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VDD R7 R1 C12 R2 D1
Q1
C14 C13 C15
C16 C18 R9
C19 C20
1
8 7
NC R3 C11
2
U1
3 4 6 5
C9 R6 C7 C10 R4 C8 C6 C5 C4 C3
C17
R5
C2
ARCHIVE INFORMATION
R8
Z9 Z8 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7
Z10 Z11 RF OUTPUT Z12 Z13 Z14 Z15 Z16 C21 Z17
C1, C21 C2, C20 C3, C19 C4, C18 C5, C10, C16, C17 C6, C11, C12, C15 C7, C14 C8, C13 C9 D1 R1 R2 R3 R4 R5 R6 R7 R8, R9
6.8 pF Chip Capacitors, ATC 10 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 1000 pF Chip Capacitors, ATC 0.1 F Chip Capacitors, ATC 39K Chip Capacitors, ATC 22 F Tantalum Chip Capacitors 6.8 F Tantalum Chip Capacitor 5.1 V Zener Diode, MA8051CT - ND 22.1 k, 1/4 W 1%, Chip Resistor 5K Trim Pot, #3224W - 1 - 502E 12 k, 1/4 W 1%, Chip Resistor 100 k, 1/4 W 1%, Chip Resistor 39 k, 1/4 W 1%, Chip Resistor 10 , 1/4 W 1%, Chip Resistor 2.2 k, 1/4 W 1%, Chip Resistor 50 , 1/4 W 1%, Chip Resistors
U1 Q1 PCB Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z11 Z9, Z10 Z12 Z13 Z14 Z15 Z16 Z17
Voltage Converter, LTC 1261 Switch, MTP23P06V Rogers RO4350, 0.020, r = 3.50 0.044 x 0.250 Microstrip 0.044 x 0.030 Microstrip 0.615 x 0.050 Microstrip 0.044 x 0.070 Microstrip 0.270 x 0.490 Microstrip 0.044 x 0.470 Microstrip 0.434 x 0.110 Microstrip 0.015 x 0.527 Microstrip 0.290 x 90 Microstrip Radial Stub 0.184 x 0.390 Microstrip 0.040 x 0.580 Microstrip 0.109 x 0.099 Microstrip 0.030 x 0.225 Microstrip 0.080 x 0.240 Microstrip 0.044 x 0.143 Microstrip
Figure 1. 3.4 - 3.6 GHz Single Supply Bias Sequencing Test Circuit Schematic
MRFG35010R1 RF Device Data Freescale Semiconductor 3
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VDD = 12 V C11 R2 C8 R6 R3 R4 C10 R5 C9 C17 U1 R9 C13 C16 C15 C14 C19 R7 G D C12 D1 S Q1
R1
C18
GND
C7
C6
C5
C4 C3 C20
ARCHIVE INFORMATION
INPUT C1 CUT OUT AREA OUTPUT C21
MRFG35010 Rev-06
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 3.4 - 3.6 GHz Test Circuit Component Layout
MRFG35010R1 4 RF Device Data Freescale Semiconductor
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C2 R8
TYPICAL CHARACTERISTICS
13.5 13 G ps , POWER GAIN (dB) 12.5 12 11.5 11 10.5 10 9.5 0.1 1 Pout, OUTPUT POWER (WATTS) 10 D Gps VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA S = 0.857e-144.24_, L = 0.798e-164.30_ 80 70 60 50 40 30 20 10 0 D , DRAIN EFFICIENCY (%)
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Figure 3. Power Gain and Drain Efficiency versus Output Power
0 -10 -20 ACPR (dBc) -30 -40 ACPR -50 -60 -70 0.1 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA S = 0.857e-144.24_, L = 0.798e-164.30_ 1 Pout, OUTPUT POWER (WATTS) -50 -60 -70 10 IRL 0 IRL, INPUT RETURN LOSS (dB) -10 -20 -30 -40
Figure 4. W - CDMA ACPR and Input Return Loss versus Output Power
36 34 Pout , OUTPUT POWER (dBm) 32 30 28 26 24 22 20 5 10 15 Pin, INPUT POWER (dBm) 20 25 0 Pout D 15 30 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA S = 0.857e-144.24_, L = 0.798e-164.30_ 60
45
Figure 5. W - CDMA Output Power and Drain Efficiency versus Input Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35010R1 RF Device Data Freescale Semiconductor 5
D , DRAIN EFFICIENCY (%)
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f = 3600 MHz Zload f = 3500 MHz Zo = 25
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Zsource f = 3600 MHz f = 3500 MHz
VDD = 12 V, IDQ =180 mA, Pout = 1 W f MHz 3500 3550 3600 Zsource 4.3 - j16.3 4.2 - j16.0 4.1 - j15.8 Zload 5.7 - j7.0 5.7 - j6.8 5.7 - j6.6
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 6. Series Equivalent Source and Load Impedance
MRFG35010R1 6 RF Device Data Freescale Semiconductor
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Table 4. Class A Common Source S - Parameters at VDS = 12 Vdc, IDQ = 1000 mA
f GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 S11 |S11| 0.956 0.957 0.956 0.956 0.954 0.955 0.954 0.952 0.952 0.950 0.950 0.948 0.946 0.944 0.943 0.942 0.940 0.938 0.937 0.935 0.934 0.932 0.928 0.926 0.923 0.920 0.917 0.913 0.908 0.903 0.897 0.893 0.884 0.875 0.866 0.851 0.833 0.814 0.793 0.771 0.748 0.723 0.697 0.672 0.647 0.622 - 177.95 - 179.86 178.44 177.05 175.83 174.61 173.42 172.29 171.25 170.02 168.36 167.24 166.01 164.67 163.59 162.31 161.09 159.66 158.30 156.86 155.35 153.83 152.26 150.58 148.97 147.18 145.27 143.23 141.12 138.91 136.46 133.77 130.86 127.58 124.06 120.13 115.98 111.48 106.69 101.44 95.69 89.38 82.41 74.51 65.82 56.14 |S21| 5.591 4.668 4.007 3.520 3.138 2.842 2.604 2.402 2.236 2.098 2.054 1.944 1.850 1.769 1.698 1.638 1.580 1.532 1.491 1.454 1.422 1.396 1.375 1.356 1.342 1.332 1.328 1.326 1.329 1.335 1.346 1.360 1.375 1.393 1.417 1.443 1.472 1.505 1.541 1.581 1.622 1.668 1.721 1.771 1.818 1.860 S21 79.60 76.30 73.21 70.18 67.20 64.30 61.65 58.87 56.13 53.34 50.41 47.63 44.77 42.06 39.29 36.53 33.69 30.84 28.03 25.19 22.38 19.54 16.68 13.80 10.91 7.87 4.88 1.73 - 1.48 - 4.80 - 8.26 - 11.89 - 15.61 - 19.50 - 23.55 - 27.75 - 32.06 - 36.63 - 41.44 - 46.57 - 51.82 - 57.33 - 63.32 - 69.70 - 76.56 - 83.67 |S12| 0.007 0.007 0.008 0.008 0.009 0.010 0.009 0.011 0.011 0.011 0.011 0.012 0.013 0.014 0.015 0.015 0.016 0.017 0.017 0.019 0.020 0.021 0.022 0.023 0.025 0.027 0.028 0.030 0.032 0.034 0.036 0.039 0.042 0.045 0.048 0.052 0.056 0.060 0.065 0.071 0.076 0.082 0.089 0.096 0.103 0.110 S12 15.64 23.81 23.84 26.09 30.55 28.91 31.64 31.90 36.06 33.99 32.65 32.47 37.07 34.40 35.71 37.47 35.82 35.69 35.43 34.19 34.10 35.51 33.15 30.84 31.00 29.11 28.98 27.36 25.93 24.33 22.30 19.80 17.46 15.22 13.31 10.27 7.36 4.18 1.13 - 3.19 - 7.50 - 11.79 - 16.57 - 22.28 - 28.04 - 33.91 |S22| 0.741 0.739 0.736 0.736 0.735 0.735 0.734 0.735 0.735 0.736 0.725 0.725 0.725 0.725 0.725 0.724 0.724 0.722 0.721 0.720 0.718 0.718 0.716 0.714 0.711 0.708 0.704 0.699 0.694 0.687 0.679 0.670 0.659 0.648 0.636 0.626 0.618 0.609 0.602 0.592 0.582 0.575 0.568 0.559 0.549 0.539 S22 179.71 179.15 178.75 178.29 177.85 177.42 176.95 176.52 175.97 175.52 174.31 173.70 172.90 172.32 171.58 170.75 169.89 169.04 168.15 167.32 166.38 165.61 164.67 163.77 162.89 161.96 161.08 160.09 159.09 158.02 156.93 155.90 154.96 154.06 153.16 152.14 151.13 149.84 148.47 147.06 145.72 144.03 142.02 139.82 137.39 174.86
ARCHIVE INFORMATION
MRFG35010R1 RF Device Data Freescale Semiconductor 7
ARCHIVE INFORMATION
Table 5. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA
f GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 S11 |S11| 0.936 0.936 0.935 0.935 0.935 0.934 0.934 0.933 0.933 0.933 0.929 0.930 0.927 0.926 0.925 0.923 0.921 0.920 0.918 0.916 0.916 0.913 0.912 0.909 0.907 0.904 0.901 0.896 0.893 0.887 0.882 0.876 0.870 0.863 0.853 0.840 0.825 0.807 0.787 0.767 0.745 0.721 0.697 0.674 0.647 0.622 - 175.05 - 177.28 - 179.21 179.21 177.77 176.46 175.26 174.05 172.86 171.71 170.06 168.89 167.73 166.37 165.33 164.05 162.82 161.49 160.17 158.74 157.35 155.97 154.45 152.83 151.25 149.54 147.76 145.88 143.83 141.78 139.43 136.99 134.24 131.29 127.96 124.33 120.40 116.26 111.78 106.97 101.74 95.90 89.39 82.09 73.93 64.84 |S21| 5.292 4.422 3.803 3.341 2.983 2.701 2.473 2.284 2.124 1.991 1.948 1.845 1.757 1.678 1.610 1.551 1.498 1.451 1.411 1.376 1.347 1.321 1.300 1.280 1.268 1.257 1.253 1.253 1.255 1.260 1.268 1.281 1.295 1.311 1.334 1.354 1.386 1.414 1.453 1.492 1.537 1.579 1.633 1.685 1.740 1.790 S21 80.70 77.20 74.02 70.87 67.85 64.80 62.00 59.24 56.47 53.70 50.73 47.88 44.99 42.32 39.48 36.70 33.90 31.07 28.22 25.43 22.58 19.80 16.98 14.05 11.14 8.18 5.20 2.11 - 1.10 - 4.43 - 7.81 - 11.29 - 14.96 - 18.72 - 22.68 - 26.85 - 31.01 - 35.40 - 40.01 - 44.83 - 49.99 - 55.50 - 61.25 - 67.46 - 74.01 - 81.02 |S12| 0.014 0.014 0.015 0.014 0.014 0.015 0.015 0.014 0.015 0.015 0.016 0.016 0.016 0.016 0.017 0.018 0.018 0.018 0.019 0.020 0.020 0.021 0.022 0.023 0.024 0.026 0.026 0.028 0.030 0.031 0.033 0.035 0.038 0.040 0.042 0.046 0.049 0.053 0.057 0.061 0.066 0.071 0.077 0.084 0.090 0.097 S12 3.73 3.63 3.78 7.22 5.83 7.03 7.15 6.85 6.90 8.93 7.81 8.58 8.16 10.00 9.25 11.89 10.06 10.11 10.86 9.05 8.57 9.64 10.23 9.68 10.24 7.35 9.11 6.33 7.09 5.16 4.74 4.34 1.64 0.43 - 2.33 - 4.01 - 6.67 - 9.06 - 11.29 - 14.79 - 18.66 - 22.20 - 26.02 - 30.63 - 35.78 - 41.70 |S22| 0.735 0.735 0.735 0.736 0.738 0.738 0.738 0.739 0.740 0.739 0.730 0.731 0.731 0.730 0.732 0.731 0.731 0.730 0.729 0.728 0.727 0.727 0.725 0.723 0.719 0.717 0.714 0.709 0.704 0.697 0.690 0.682 0.672 0.660 0.650 0.639 0.632 0.624 0.617 0.608 0.599 0.589 0.580 0.569 0.557 0.545 S22 - 178.66 - 179.61 179.80 179.20 178.58 178.09 177.54 177.01 176.42 175.92 174.51 173.88 173.09 172.45 171.71 170.85 170.01 169.14 168.25 167.43 166.51 165.61 164.76 163.70 162.83 161.86 160.85 159.82 158.76 157.60 156.46 155.26 154.16 153.12 152.16 150.97 149.72 148.33 146.78 145.00 143.33 141.41 139.21 136.94 134.20 175.22
ARCHIVE INFORMATION
MRFG35010R1 8 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
2x
K
G
1
(INSULATOR)
S
(FLANGE) 2
B
bbb
3 2x
M
TA
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED .030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX .795 .805 .225 .235 .125 .176 .034 .044 .055 .065 .004 .006 .562 BSC .077 .087 .085 .115 .355 .365 .355 .365 .125 .135 .225 .235 .225 .235 .005 .010 .015 MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.47 0.89 1.12 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 2.16 2.92 9.02 9.27 9.96 10.16 3.18 3.43 5.72 5.97 5.72 5.97 0.13 0.25 0.38
B bbb
M
D TA
2x M
Q bbb
M
TA
M
B
M
B
M
N (LID) ccc
M
TA
M
B
M
R (LID) ccc C
M
TA
M
B H
M
E
F
ARCHIVE INFORMATION
T
SEATING PLANE
(INSULATOR)
M
aaa A A
M
TA
M
B
M
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
CASE 360D - 02 ISSUE C NI - 360HF
MRFG35010R1 RF Device Data Freescale Semiconductor 9
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DIM A B C D E F G H K M N Q R S aaa bbb ccc
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 9 Date Jan. 2008 * Listed replacement part, p. 1 * Added Revision History, p. 10 Description
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MRFG35010R1 10 RF Device Data Freescale Semiconductor
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Home Page: www.freescale.com
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MRFG35010R1
Document Number: RF Device Data MRFG35010 Rev. 9, 1/2008 Freescale Semiconductor
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